eMemory NeoFuse Technology Is Verified in 16nm FinFET Process
Hsinchu, Taiwan (May 5, 2015) – eMemory Technology announced today that its One-Time Programmable (OTP) NeoFuse technology has been successfully verified in 16nm FinFET process, with full silicon intellectual property (Silicon IP) development and customer application deployment expected to be completed by the end of this year. NeoFuse technology has also been deployed in 28nm Poly SiON and HKMG process platforms in foundries in Taiwan, the U.S. and China regions and has entered mass-production. The benefits that its mass-production brings to eMemory are expected to further expand.
eMemory’s NeoFuse technology has already been implemented in the logic, high-voltage (HV), low-power (LP) and ultra-low power (ULP) process platforms at 0.11um, 65nm, 55nm, 40nm, and 28nm processes in many leading foundries and has entered mass-production. NeoFuse Silicon IP has been adopted by many customers for CMOS image sensors (CIS), image signal processors (ISP), sensor hubs, MEMS controllers, security microcontroller units (Security MCU), DRAM repair, and other application fields.
NeoFuse Silicon IP targets a wide range of applications, including code storage, encryption, identification, and analog trimming, etc. NeoFuse’s unique anti-fuse structure and read-write technology provide security key function, transforming data into read-only protection mode after being written to secure the data stored in the ICs from being damaged or tampered with; its data security protection level has already received CA certification. Furthermore, eMemory’s Logic NVM Silicon IP achieves ultra-low voltage operation through a special circuit design. It can identify the firmware and IC before system functions are activated in order to enhance data protection, providing added-value to applications with data security requirements, such as IoT products and smart homes.