October 17,2018

eMemory’s OTP IP Qualified on GLOBALFOUNDRIES 22nm FD-SOI process

Hsinchu, Taiwan (October 17, 2018) –eMemory today announced that its one-time programmable (OTP) non-volatile memory IP, NeoFuse, has been qualified on GLOBALFOUNDRIES (GF) 22FDX ® 22nm Fully-Depleted Silicon On-Insulator (FD-SOI) process technology. The combination of NeoFuse and GF’s 22FDX technologies provides an energy- and cost-efficient solution that customers can easily integrate into their system-on-chip (SoC) designs to create innovative and differentiated products for the Internet of Things (IoT), Radio Frequency (RF) connectivity, and networking market segments.

GF’s 22FDX process technology is top of mind for customers designing cost-effective devices for connected and ultra-low-power applications. The technology delivers FinFET-like performance at a cost comparable to 28nm planar technologies. The delivery of NeoFuse IP for GF’s 22FDX process allows eMemory to offer NeoFuse to customers that have improved performance, power, and area goals for their advanced IC designs.

eMemory’s NeoFuse technology requires only a single voltage pulse to be applied during programming. It is a technological breakthrough from conventional anti-fuse OTP’s multiple-pulses programming. The feature not only reduces the cost but also increases device reliability. Moreover, NeoFuse is virtually impossible to reverse engineer, providing a higher level of design protection. NeoFuse is the optimum antifuse solution for customers desiring reduced cost, increased reliability and enhanced security.

“We are so pleased to collaborate with GF to extend our OTP IP, NeoFuse, on its 22FDX platform. We believe the achievement will help our mutual customers to enhance their product portfolio, accelerate the time to market and increase their products’ competitiveness.” said Michael Ho, Vice President of Business Development at eMemory.

eMemory also plans to roll out the second generation NeoFuse on GF’s 22FDX, which will feature 0.5V power supply versus 0.7V for its first generation counterpart, resulting in even lower power consumption. Tape-out is expected by the end of Q1 2019 and verification is expected to be completed by the end of Q3 2019.