eMemory Announces Industry’s First 16nm FinFET Compact (FFC) Process Verified OTP Silicon IP
Hsinchu, Taiwan (Mar. 14, 2016) – eMemory announces today that its OTP technology NeoFuse has been verified in 16nm FinFET Compact process (16FFC), marking an important milestone as the world’s first IP provider to deliver a logic NVM solution in the cutting-edge 16FFC process platform. The rapid and successful development of NeoFuse technology in 16FFC process will facilitate product migration from 16nm FinFET Plus process (16FF+) to 16FFC.
eMemory’s NeoFuse technology features low voltage with robust memory cell structure that expedites NVM IP availability for the new process platform. As process migrates from 16FF+ to 16FFC, the features of NeoFuse IPs are remained and enhanced to minimize the impact on existing product usage. This demonstrates the benefits of excellent porting flexibility for process migration.
16FFC has been announced as the most power-efficient solution for ultra-low power wearable devices and IoT applications, and it will be entering risk production in 2016. We expect NeoFuse IP will be embedded widely in ultra-low power applications such as wearables, mobile devices, and consumer electronics owing to its early-stage IP readiness.
eMemory’s NeoFuse has passed silicon verification in 16FFC process platform and is expected to complete qualification in the third quarter of 2016, providing customers with the same specifications that are available in 16FF+. As the 16nm process continues to evolve, eMemory will follow the latest developments closely to provide customers with the most comprehensive solutions.