eMemory’s ReRAM IP is the industry's most advanced embedded EEPROM/Flash offering up to 16M bits with the endurance of 10K cycles.

eMemory’s ReRAM IP delivers an effective and power-saving embedded EEPROM/Flash up to 16M-bit in 40nm, 22nm technology and below. With its compact cell size and only 2~3 additional masks, ReRAM benefits its users with lower manufacturing costs and shorter process cycle time. An ReRAM cell consumes very low energy in data programming and access in comparison to embedded Flashes. This advantage makes it an ideal EEPROM/Flash solution for mobile and AIoT applications. Furthermore, ReRAM is coherent with IP user’s crucial analog circuits because the ReRAM module can be easily integrated with analog circuits without affecting their analog performance.

Compact Cell

~35F2 1T1R cell

2~3 BEoL Mask Adders

Lower manufacturing cost and shorter process cycle time

Low Power

~150pJ Write and ~2pJ Read

40nm and Below

Replace eFlash in advanced nodes

Coherent with Existing Analog Designs/IPs

BEoL ReRAM process won’t affect SPICE model

Technical Principles

The ReRAM memory cell is composed of a resistive switching element and a MOSFET selector. By changing the write current direction flowing through it, the resistance of its resistive switching element can be modulated between low resistance state and high resistance state to serve as a non-volatile memory.

The resistive switching element was introduced to CMOS processes with only 2~3 mask adders. Compared to embedded flashes, embedded ReRAM processes are much simpler, with lower manufacturing costs and shorter process cycle time. ReRAM further benefits its users with fast time-to-market by removing the need for the silicon-verification cycle of IP user’s crucial analog circuits. Unlike embedded Flashes, ReRAM cells are located between two back-end metal layers. Thus, it won’t cause SPICE parameter shifts of MOSFETs and other devices.

Another key competence of embedded ReRAM is it’s excellent power efficiency. An ReRAM cell can be programmed at less than 2V within and below 1uS with ~100uA. This advantage makes embedded ReRAM a high potential solution for smart card, AIoT and mobile applications.

Use Cases & Functionality 

ReRAM can be applied in various product fields, such as code storage in high-end MCUs, low power NFC/smart cards and AIoTs, and smart PMIC and Artificial Intelligence. The core function of this ReRAM technology is replace embedded Flash memory solution, especially in the advanced nodes below 40nm.



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