RRAM

eMemory’s RRAM IP is the industry's exceptional embedded EEPROM/Flash offering up to 16M bits with the endurance of 10K cycles.

eMemory’s RRAM IP delivers an effective and power-saving embedded EEPROM/Flash up to 16M-bit in 40nm, 22nm technology and below. With its compact cell size and only 2~3 additional masks, RRAM benefits its users with lower manufacturing costs and shorter process cycle time. An RRAM cell consumes very low energy in data programming and access in comparison to embedded Flashes. This advantage makes it an ideal EEPROM/Flash solution for mobile and AIoT applications. Furthermore, RRAM is coherent with IP user’s crucial analog circuits because the RRAM module can be easily integrated with analog circuits without affecting their analog performance.

Compact Cell

~35F2 1T1R cell

2~3 BEoL Mask Adders

Lower manufacturing cost and shorter process cycle time

Low Power

~150pJ Write and ~2pJ Read

40nm~22nm

Replace eFlash in technology nodes

Coherent with Existing Analog Designs/IPs

BEoL RRAM process won’t affect SPICE model

Technical Principles

The RRAM memory cell is composed of a resistive switching element and a MOSFET selector. By changing the write current direction flowing through it, the resistance of its resistive switching element can be modulated between low resistance state and high resistance state to serve as a non-volatile memory.

The resistive switching element was introduced to CMOS processes with only 2~3 mask adders. Compared to embedded flashes, embedded RRAM processes are much simpler, with lower manufacturing costs and shorter process cycle time. RRAM further benefits its users with fast time-to-market by removing the need for the silicon-verification cycle of IP user’s crucial analog circuits. Unlike embedded Flashes, RRAM cells are located between two back-end metal layers. Thus, it won’t cause SPICE parameter shifts of MOSFETs and other devices.

Another key competence of embedded RRAM is it’s excellent power efficiency. An RRAM cell can be programmed at less than 2V within and below 1uS with ~100uA. This advantage makes embedded RRAM a high potential solution for smart card, AIoT and mobile applications.

Use Cases & Functionality 

RRAM can be applied in various product fields, such as code storage in high-end MCUs, low power NFC/smart cards and AIoTs, and smart PMIC and Artificial Intelligence. The core function of this RRAM technology is replace embedded Flash memory solution, especially in the technology nodes below 40nm.

 

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