Products

Green Platform

Introduction

eMemory’s Green process uses 0.35um technology and redefined layout rules to fabricate in the 0.18um mask reduction platform. It requires only 15 masks for 3.3V and 5V 1P3M processes and is an extremely cost-effective platform. Currently, OTP (NeoBit), EEPROM (NeoEE), and MTP (NeoMTP) technologies are available in this platform.

Technical Principles

Mask layers for the Green process:

Seq Description
1 Active Area(AA)
2 Reverse Active Area(RA)
3 N Well IMP.(NW)
4 P Well IMP.(PW)
5 Poly Gate(PO)
6 N+IMP.(NP)
7 P+IMP.(PP)
8 Salicide Block(SAB)
9 Contact(CT)
10 Metal 1(M1)
11 Via 1(V1)
12 Metal 2(M2)
13 Via 2(V2)
14 Metal 3(M3)
15 Passivation(PA)

Advantages

The relatively few masking layers correspond to a shorter FAB cycle time and, as a result, a reduction in manufacturing costs of as much as 30%. The smaller cell size of the OTP (NeoBit), EEPROM (NeoEE), and MTP (NeoMTP) further reduces costs and waste.

Specifications

3V Green Platform

NVM Type OTP
NeoBit
EEPROM
NeoEE
Read Voltage VDD: 1.2V~3.6V VDD: 1.7V~3.6V VDD: 1.7V~3.6V
Program Voltage VPP: 6.5V VPP: 6.5V VDD: 1.8V~3.6V
Memory Configuration 4Kx16 32Kx16 1Kx8 / 128x8
Program Scheme Byte PGM Byte PGM Byte Write/ Page Program/ Page Erase
Erase Scheme UV (Chip) UV (Chip) Byte Write/ Page Program/ Page Erase
Deep Standby Current (Max) <1uA <1uA <1uA
Access Time (Max) 1us(1.2V~1.7V) 200ns(1.7V~2V) 150ns(2V~3.6V) 120ns(1.7V~2.4V) 70ns(2.4V~3.6V) 200ns
Read Current (Typ) 2.8mA@6.6MHz 6mA@14.28MHz 1mA@5MHz
Program Time (Typ) 100us 100us 3ms
Erase Time (Typ) 30 min 30 min 9ms
Endurance 1 1 20k
Status Production Production Production

5V Green Platform

NVM Type OTP NeoBit EEPROM NeoEE MTP NeoMTP
Read Voltage VDD: 1.5V~5.5V VDD; 1.8V~5.5V
VREF:1.15V~1.25V
VDD: 1.8V~5.5V
Program Voltage VPP: 8.5V VDD; 2.5V~5.5V
VREF:1.15V~1.25V
VDD: 2.5V~5.5V
Memory Configuration 8Kx16 256X8 16K8
Program Scheme Byte PGM Page Program Byte PGM
Erase Scheme UV (Chip) Page/Chip Erase Sector/Chip Erase
Deep Standby Current (Max) <1uA <1uA <1uA
Access Time (Max) 500ns(1.5V~1.8V)
200ns(1.8V~3.6V)
100ns(3.6V~5.5V)
120ns @VDD=4.5V~5.5V
1us @VDD=1.8V~4.5V
125ns @ 3V ~ 5.5V
500ns @ 1.8V ~ 3V
Read Current (Typ) 3.9mA @10MHz IVDD: 0.25mA/0.5mA@1MHz
IVREF: 0.5mA@1MHz (Max)
1mA @8Mhz
Program Time (Typ) 100us 10ms 100us
Erase Time (Typ) 30min 10ms 250ms
Endurance 1 1k 100-1K (depend on process)
Status Production Production Production

Applications

The main application of the Green platform is code storage in microcontrollers or speech ICs.

Availability

The Green platform is currently available at 5 foundries world-wide.