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| General Description | |||||
eMemory provides full functional NeoFlash Macro which can be embedded into logic and derivative processes with only 3 additional non-critical masks. Due to its simple process, robust design and low cost, NeoFlash Macro is promising for embedded MTP/Flash demands in system on chip (SoC) applications, such as MCU, DSP, cellular communications, smart card, DVD, voice and speech ICs. NeoFlash Macro is currently available in 0.18um technology. It consists of two memory blocks ¡V a main memory block and a relatively small information block. Customers can make best use of respective blocks for separate data, code or device information storage. Main memory block density can be up to 2Mbits, and information block density can be set within the range of 1Kbytes. General sector size is set as 32Kbytes. Sectors inside the main memory block can be erased either separately or simultaneously depending on customers' needs. Memory block configuration is currently available in x8 only. |
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| Product Feature | |||||
| ¡´ 0.18um NeoFlash Macro ¡V ¡@• Operation voltages: 1.8V/3.3V dual power supply ¡@• Memory organization: ¡@¡@¡V Main memory: up to 2Mbits ¡@¡@¡V Information memory: up to 1Kbytes ¡@• Byte program time: 30us ¡@• Sector/chip erase time: 1s ¡@• Read speed: 40ns (Taa) ¡@• Read operation current: <10mA @ 25MHz (typ) ¡@• Read Standby current: <1uA (typ) ¡@• Temperature range ¡V40¢XC ~ 125¢XC ¡@• Endurance: at least 1,000 cycles @ 85¢XC ¡@• Data retention: 10 years @ 85¢XC |
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