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NeoFlash Macro Specification |
Process Node |
0.18um 1P4M |
IP Type |
EF064K8CCS2A |
EF128K8CCS2A |
EF256K8CCS2A |
Main Memory Density |
64KB |
128KB |
256KB |
Information Memory Density |
512B |
Sector Erase Capability |
32KB |
Macro Size |
1.377 mm2 |
1.891 mm2 |
2.935 mm2 |
Power Supply |
1.8V / 3.3V dual power supply |
IO |
8 |
Operating Voltage (Typ) |
1.6V~2.0V / 3.0V~3.6V |
Standby Current (Typ) |
<1uA |
Operating Current @ 25MHz (Typ) |
<10mA |
Access Time, Taa |
40 ns |
Program Scheme |
Byte program |
Erase Scheme |
Sector erase / chip erase |
Byte Program Time (Typ) |
30 us |
Sector Erase Time |
1s |
Chip Erase Time |
1s |
Endurance |
1000 cycles @ 85¢XC |
Data Retention |
10 year @ 85¢XC |
Metal Layer |
4 |
Availability |
C |
*"T" indicates tsmc; "C" indicates Chartered; "P" indicates PSC; "O" indicateds others |
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