Neobit Fuse is a high performance, low cost and low power consumption One-Time-Programmable memory block manufactured by CMOS compatible process without additional mask or wafer change. The OTP Fuse cells are initialized by ultraviolet light illumination and programmed by the injection of hot electrons generated by avalanche impact ionization in Neobit. A 6.5V programming voltage is supplied from an external pad or from the internal charge pumping circuit. The Neobit Fuse can function in wide range down to 1.6V in 0.5um to 0.18um technologies for read operation. Neobit Fuse provide the best solution for fuse replacement applied in analog IC, LCD driver, network IC etc. Neobit Fuse has been qualified by famous foundries and is easily incorporated to customer's design.

Advantage

Neobit Fuse provides low cost, small size and high flexible replacement for the traditional metal and poly fuse. The electrical programmable feature of Neobit fuse makes package or field level repair possible. No expensive laser equipment and no probing pads are required to program fuses.Testing time can be saved significantly due to short byte-program time. Various densities are available for customer's request. The detailed comparison between Neobit Fuse and metal/poly fuse is listed as follows.

Type Neobit Fuse Metal/Poly Fuse Program Power 6.5V Vpp Laser Stress Current stress Additional Mask No Necessary for fuse definition No Blow Scheme Electrical By Special Laser Equipment Electrical Probe Pad No No Necessary for fuse blowing Process Dependence Low High High Program Time 100us/Byte >100ms/bit >10ms/bit Program Current 150uA/bit -- >10mA/bit FT Programmable Yes No Yes

Application Suggestion

Neobit Fuse can be employed for various purposes. Some of the most popular are: • Calibration and trim setting • ID and serial number storage • Fuse replacement • Security bits storage for encryption • SRAM bank-selection setting

Product Feature

• Available in 0.5um, 0.35um, 0.25um, 0.18um and 0.13um processes • Power supply: dual power supply (VDD and VPP) • Byte program time: 0.1ms (max) • Temperature range: -40°C ~ 85°C • Access time: 70ns (max) • Current 　- Operating: 64uA/bit (max) 　- Standby: 1uA (max) • Data Retention: 10 years (min)

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